Site‐Selective Band Engineering for Controlled Synthesis of Graphene Intramolecular Junctions

The controllable preparation of graphene intramolecular junctions is a key step in realizing the application of graphene in electronic devices. This paper proposes a chemical modification method of a selected region for the preparation of graphene metallic-semiconducting intramolecular junctions. The junction exhibits remarkable rectification characteristics with a rectification ratio as high as 342. Applying different gate voltages can cause the semiconductor side of the junction region to change from p-type doping to n-type doping, thereby achieving a transition between forward and reverse rectification behavior. This study provides a new approach to the construction of graphene intramolecular junctions, which is of great significance for promoting their practical applications in electronic devices.