Texture-engineered fabrication of ultraflat, 6-inch single-crystal Cu(111) wafers

Ultraflat, single-crystal Cu(111) thin films are widely regarded as ideal epitaxial substrates for synthesizing two-dimensional single crystals for ease of subsequent transfer and device integration. However, the fabrication of Cu(111) remains hindered by a lack of scalable and reliable technique to eliminate in-plane twin boundaries (TBs) in final films. Here, we present a method to address TB issues for harvesting ultraflat, TB-free Cu(111) wafers, which also enable the growth of high-quality, single-crystal graphene wafers. It has been revealed that the deposition of Cu films with designed texture would enable the selective abnormal grain growth of specific Cu(111) during high-temperature annealing, allowing for the production of 6-inch TB-free Cu(111) wafers with high crystallinity (misorientation angle of 0.48°), flatness (<i>R</i><sub>a</sub> = 0.34 nm), and scalability (25 wafers per batch). As-harvested graphene exhibits excellent electronic quality and wafer-scale uniformity, with an average carrier mobility of 10,093 square centimeters per volt per second and sheet resistance of 905 ohm per square with 3.5% deviation over entire wafer.

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Publication Details

Journal
Science Advances
Published
2025-10-29
DOI
https://doi.org/10.1126/sciadv.ady1943
Citations
1
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.52
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article

Texture-engineered fabrication of ultraflat, 6-inch single-crystal Cu(111) wafers

Li Lin, Styra Xicun Wang, Yeshu Zhu, Zhaoning Hu et al.
1 citations
Science Advances
Graphene research and applications
0.52
article

Texture-engineered fabrication of ultraflat, 6-inch single-crystal Cu(111) wafers

Li Lin, Styra Xicun Wang, Yeshu Zhu, Zhaoning Hu, Nianpeng Lu, Shuang Lou, Kaicheng Jia, Ming-Tso Wei, Junhao Liao, Jiaxin Shao, Ge Chen, Yunsong Ge, Mingtong Zhu, Jincan Zhang, Shiwei Wang, Sheng Li, Xiucai Sun, Wei Wei, Zhongfan Liu, Q.R. Zhang, Yixuan Zhao
article en
1 citations

Abstract

Ultraflat, single-crystal Cu(111) thin films are widely regarded as ideal epitaxial substrates for synthesizing two-dimensional single crystals for ease of subsequent transfer and device integration. However, the fabrication of Cu(111) remains hindered by a lack of scalable and reliable technique to eliminate in-plane twin boundaries (TBs) in final films. Here, we present a method to address TB issues for harvesting ultraflat, TB-free Cu(111) wafers, which also enable the growth of high-quality, single-crystal graphene wafers. It has been revealed that the deposition of Cu films with designed texture would enable the selective abnormal grain growth of specific Cu(111) during high-temperature annealing, allowing for the production of 6-inch TB-free Cu(111) wafers with high crystallinity (misorientation angle of 0.48°), flatness (<i>R</i><sub>a</sub> = 0.34 nm), and scalability (25 wafers per batch). As-harvested graphene exhibits excellent electronic quality and wafer-scale uniformity, with an average carrier mobility of 10,093 square centimeters per volt per second and sheet resistance of 905 ohm per square with 3.5% deviation over entire wafer.

Science AdvancesVol. 11(44)
Chinese Academy of Sciences (CN), Peking University (CN), Soochow University (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN), Beijing Graphene Institute (CN), Beijing National Laboratory for Molecular Sciences (CN), Institute of Physics (CN), Beijing University of Chemical Technology (CN)
Openalex Percentile: Top 31%
Graphene research and applications
0.52
DOIOpen Access PDFOpenAlex
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