Investigation on the Optoelectronic Performance and Modulation Bandwidth of Green µ-LEDs Using AlON Buffer Layer
This study investigates an AlON buffer layer approach to enhance the optoelectronic performance and modulation bandwidth of green µ-LEDs. Compared to traditional AlN buffer layers, the AlON buffer layer improves GaN crystal quality, reduces internal stress, and suppresses the quantum-confined Stark effect. The modulation bandwidth shows a 21.75% enhancement over devices with AlN buffer layers. The peak external quantum efficiency is also improved by 9.86% compared to traditional structures. These results highlight the potential of AlON buffer layers for high-performance green µ-LEDs in both display and visible light communication applications.
Authors
- Tingwei Lu (ORCID: https://orcid.org/0000-0003-4445-4648)
- Hao‐Chung Kuo (ORCID: https://orcid.org/0000-0002-9373-4649)
- Tingzhu Wu (ORCID: https://orcid.org/0000-0001-9453-6823)
- Changyuan Yu (ORCID: https://orcid.org/0000-0002-3185-0441)
- Zhong Chen (ORCID: https://orcid.org/0000-0002-1473-2224)
- Xiaodong Wang (ORCID: https://orcid.org/0000-0003-1942-4236)
- Shuhui Wang (ORCID: https://orcid.org/0000-0003-2406-5274)
- Ruifeng Liu (ORCID: https://orcid.org/0000-0003-0530-8429)
- Longteng Wang
- Yurong Dai (ORCID: https://orcid.org/0009-0003-8867-6573)
- W. Zheng (ORCID: https://orcid.org/0009-0005-2274-2843)
Institutions
- Hong Kong Polytechnic University (HK)
- National Yang Ming Chiao Tung University (TW)
- Xiamen University (CN)
- Jiaxing Vocational Technical College (CN)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-10-29
- DOI
- https://doi.org/10.1364/ol.579281
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00