Interface engineering of oxidized Mo electrodes for imprint stability and enhanced endurance in hafnia-based ferroelectric devices
Short O 2 RTA converts Mo into a MoO x -rich interface ( φ ≥ 5.5 eV), suppressing trap formation and stabilizing imprint in HZO. This in-situ route avoids sputtered MoO 3 and enables robust FTJ endurance.
Authors
- Jinho Ahn (ORCID: https://orcid.org/0000-0001-8271-5998)
- Sanghun Jeon (ORCID: https://orcid.org/0000-0002-4222-1587)
- Junghyeon Hwang (ORCID: https://orcid.org/0000-0002-2026-2097)
- Chaeheon Kim (ORCID: https://orcid.org/0009-0004-2320-5778)
- Yong‐Su Kim (ORCID: https://orcid.org/0009-0008-2066-4505)
- Geonhyeong Kang
Institutions
- Korea Advanced Institute of Science and Technology (KR)
- Hanyang University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02605a
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00