Scattering Engineering for High Power Factor Semimetals Proved by Shubnikov‐de Haas Oscillation and Anisotropic Resistivity

Abstract The carrier dynamics of the ultra‐high power factor semimetal Ta 2 PdSe 6 are investigated using magnetotransport and anisotropic resistivity measurements. The magnetotransport analysis reveals a pronounced asymmetry in the mobilities of electrons and holes, which plays a key role in the thermoelectric performance. The effective mass and scattering time of the charge carriers are quantitatively determined through combined analyses of Shubnikov‐de Haas oscillations and anisotropic resistivity. Furthermore, it is demonstrated that chemical substitution modifies the thermoelectric properties of Ta 2 PdSe 6 primarily by altering the scattering time. These findings establish a new strategy—scattering engineering—for optimizing high power factor semimetals by controlling charge carrier lifetimes rather than solely relying on band structure engineering.

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Publication Details

Journal
Advanced Electronic Materials
Published
2025-10-28
DOI
https://doi.org/10.1002/aelm.202500279
Citations
1
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.52

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Scattering Engineering for High Power Factor Semimetals Proved by Shubnikov‐de Haas Oscillation and Anisotropic Resistivity

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Scattering Engineering for High Power Factor Semimetals Proved by Shubnikov‐de Haas Oscillation and Anisotropic Resistivity

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article en
1 citations

Abstract

Abstract The carrier dynamics of the ultra‐high power factor semimetal Ta 2 PdSe 6 are investigated using magnetotransport and anisotropic resistivity measurements. The magnetotransport analysis reveals a pronounced asymmetry in the mobilities of electrons and holes, which plays a key role in the thermoelectric performance. The effective mass and scattering time of the charge carriers are quantitatively determined through combined analyses of Shubnikov‐de Haas oscillations and anisotropic resistivity. Furthermore, it is demonstrated that chemical substitution modifies the thermoelectric properties of Ta 2 PdSe 6 primarily by altering the scattering time. These findings establish a new strategy—scattering engineering—for optimizing high power factor semimetals by controlling charge carrier lifetimes rather than solely relying on band structure engineering.

Advanced Electronic MaterialsVol. 11(19)
Japan Atomic Energy Agency (JP), Okayama University of Science (JP), Okayama University (JP), Tohoku University (JP), Kyoto University (JP), Advanced Science Research Center (JP), Nagoya University (JP), The University of Tokyo (JP)
University of Tokyo, Institute for Materials Research, Tohoku University, Information Technology Center, Nagoya University, Division of Materials Research
Openalex Percentile: Top 31%
Advanced Thermoelectric Materials and Devices
0.52
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