Advanced BCl3-Driven Deep Ion Etching of β-Ga2O3 for Precision High-Aspect-Ratio Nanostructures

Gallium oxide-based devices are critical in various applications, including industrial safety, the gas and petroleum sectors, and research environments. However, the deep etching process has not been thoroughly explored. Key parameters such as etching rate, selectivity, uniformity, isotropic/anisotropic behavior, and surface properties all influence the effectiveness of the etching process and its reproducibility. This research was motivated by the need for efficient fabrication processes, particularly in applications where sensors must operate in harsh environments, due to their instead of owning to low leakage current density of their power devices. In this study, we studied a deep etching technique for Ga₂O₃, focusing on the chemical stability of the two planes and identifying suitable protocols that could enhance etching depth via a dry-etching process. A deep ion-etching process for Ga₂O₃ was successfully developed, achieving deep etches of 6.97 µm in the Ga₂O₃. These advancements pave the way for high-aspect-ratio Ga₂O₃ nanostructures, offering new possibilities for robust nanosensors in harsh environments.