Simulation Analysis of Cu2O Solar Cells

Cu2O solar cells are regarded as a promising emerging inorganic photovoltaic technology due to their power conversion efficiency (PCE) potential and material sustainability. While previous studies primarily focused on the band offset between n-type buffer layers and Cu2O optical absorption, this work systematically investigated an ETL/buffer/p-Cu2O/HTL heterojunction structure using SCAPS-1D simulations. Key design parameters, including bandgap (Eg) and electron affinity (χ) matching across layers, were optimized to minimize carrier transport barriers. Furthermore, the doping concentration and thickness of each functional layer (ETL: transparent conductive oxide; HTL: hole transport layer) were tailored to balance electron conductivity, parasitic absorption, and Auger recombination. Through this approach, a maximum PCE of 14.12% was achieved (Voc = 1.51V, Jsc = 10.52 mA/cm2, FF = 88.9%). The study also identified candidate materials for ETL (e.g., GaN, ZnO:Mg) and HTL (e.g., ZnTe, NiOx), along with optimal thicknesses and doping ranges for the Cu2O absorber. These findings provide critical guidance for advancing high-performance Cu2O solar cells.