A quantum resistance memristor for an intrinsically traceable International System of Units standard

The recent revision of the International System of Units (SI)-which fixed the numerical values of nature's fundamental constants-has opened new perspectives for practical realizations of SI units. Here we demonstrate an intrinsic resistance standard based on memristive nanoionic cells that operate in air at room temperature and are directly accessible to end users. By driving these devices into the quantum conductance regime and using an electrochemical-polishing-based programming strategy, we achieved quantum conductance levels that can be exploited as intrinsic standard values. An interlaboratory comparison confirmed metrological consistency, with deviations of -3.8% and 0.6% from the agreed SI values for the fundamental quantum of conductance, G<sub>0</sub>, and 2G<sub>0</sub>, respectively. These results lay the groundwork for the implementation of national metrology institute services on chip and for the development of self-calibrating measurement systems with zero-chain traceability.

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Publication Details

Journal
Nature Nanotechnology
Published
2025-10-27
DOI
https://doi.org/10.1038/s41565-025-02037-5
Citations
4
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
2.92

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article

A quantum resistance memristor for an intrinsically traceable International System of Units standard

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4 citations
Nature Nanotechnology
Advanced Memory and Neural Computing
2.92
article

A quantum resistance memristor for an intrinsically traceable International System of Units standard

Itır Köymen, Özgür Bozat, Gianluca Milano, Fabio Michieletti, Ilia Valov, Carlo Ricciardi, İlker Öztoprak, Mariela A. Menghini, Daniel Granados, Giuseppe Leonetti, E. Miranda, J. Suñé, Isabel Godinho, Luca Boarino, Natascia De Leo, Luís Ribeiro, Luca Callegaro, Xin Zheng, Vítor Cabral, Gabriel Caballero
article en
4 citations

Abstract

The recent revision of the International System of Units (SI)-which fixed the numerical values of nature's fundamental constants-has opened new perspectives for practical realizations of SI units. Here we demonstrate an intrinsic resistance standard based on memristive nanoionic cells that operate in air at room temperature and are directly accessible to end users. By driving these devices into the quantum conductance regime and using an electrochemical-polishing-based programming strategy, we achieved quantum conductance levels that can be exploited as intrinsic standard values. An interlaboratory comparison confirmed metrological consistency, with deviations of -3.8% and 0.6% from the agreed SI values for the fundamental quantum of conductance, G<sub>0</sub>, and 2G<sub>0</sub>, respectively. These results lay the groundwork for the implementation of national metrology institute services on chip and for the development of self-calibrating measurement systems with zero-chain traceability.

Nature NanotechnologyVol. 20(12)
Madrid Institute for Advanced Studies (ES), Gebze Technical University (TR), Universidad Complutense de Madrid (ES), Universitat Autònoma de Barcelona (ES), TOBB University of Economics and Technology (TR), Forschungszentrum Jülich (DE), Politecnico di Torino (IT), Ernst Ruska Centre (DE), Institute of Electrochemistry and Energy Systems (BG), Instituto Português Da Qualidade (PT), Tübitak National Metrology Institute (TR), Istituto Nazionale di Ricerca Metrologica (IT)
Forschungszentrum Jülich, European Metrology Programme for Innovation and Research
Openalex Percentile: Top 8%
Advanced Memory and Neural Computing
2.92
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