Pathway to >60% Efficiency in AlGaN‐Based Ultraviolet‐C Light‐Emitting Diodes
Ray‐tracing simulations of ultraviolet‐C light‐emitting diodes (UVC LEDs) reveal that the primary limitation in light extraction efficiency (LEE) is the absorption in the LED layers, contacts, and substrate—not the high refractive index of AlGaN, as is commonly suspected. The research demonstrates a significant improvement in LEE with the removal of the p‐GaN contact layer and the use of highly reflective UVC contact metallization, far surpassing the efficiency gains achievable through typically applied surface modifications alone. Multiple internal reflections raise the probability of photon escape. The model agrees well with measurements from representative UVC LEDs and suggests routes to achieve LEE >60%.
Authors
- Pramod Reddy (ORCID: https://orcid.org/0000-0002-8556-1178)
- Ronny Kirste (ORCID: https://orcid.org/0000-0002-2596-4450)
- Baxter Moody (ORCID: https://orcid.org/0009-0004-1766-3924)
- Zlatko Sitar (ORCID: https://orcid.org/0000-0002-7385-0837)
- Shashwat Rathkanthiwar (ORCID: https://orcid.org/0000-0003-0180-1398)
- Ramón Collazo (ORCID: https://orcid.org/0000-0002-5229-3824)
- Jack Almeter
- James Loveless (ORCID: https://orcid.org/0009-0003-2308-5246)
Institutions
- North Carolina State University (US)
- Adroit Materials (United States) (US)
Publication Details
- Journal
- physica status solidi (a)
- Published
- 2025-10-28
- DOI
- https://doi.org/10.1002/pssa.202500520
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- Division of Electrical, Communications and Cyber Systems
- Army Research Office