Simulation approaches and fabrication technology for InGaAs/InP single-photon avalanche diodes for SWIR detection

This study explores the use of Single-Photon Avalanche Diodes (SPADs) in time-of-flight imaging applications that necessitates single-photon detection to overcome reflection losses in 3D scene reconstruction and non-line-of-sight imaging. Short-Wavelength Infrared (SWIR) operation at 1550nm enables higher laser intensities while maintaining eye safety. Progress has been made in fabricating InGaAs/InP SPADs using a novel planar zinc diffusion process with selective epitaxial overgrowth following recess-etch steps, creating a sophisticated double-well-shaped doping profile for spatially confined p-type regions. Technology Computer-Aided Design (TCAD) simulations predict device performance characteristics, particularly dark current behavior under various operational conditions. Central to this study is the application of Technology Computer-Aided Design (TCAD) simulations, which accurately predict dark count rates in Geiger mode operation. This research aims to significantly advance the development of InGaAs/InP SPADs by creating a simulation framework to analyze key performance metrics, such as dark current under various operational conditions.