TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs

The n-type and p-type operations of 22 nm Fully Depleted Silicon on Insulator (FDSOI) Three-Independent-Gates Reconfigurable Field Effect Transistors (TIG-RFETs) are simulated, incorporating Schottky contacts to the drift-diffusion model. Key-features are selected and adjusted to fit experimental results, like: Schottky barrier height (SBH), direct tunnelling and presence of traps. The inclusion and correct adjustment of these parameters reveals the importance of strong electrostatic control over the energetic barrier at the metal-semiconductor junctions. We extend this analysis with a study of the theoretical impact of the metal-semiconductor interface position under the sourcedrain gates coupled with the length of the ungated regions.