Low-temperature electron dephasing rates indicate magnetic disorder in superconducting TiN films

We investigate electron transport and phase-breaking processes in thin titanium nitride (TiN) films of epitaxial quality. Previous studies show that a minute surface magnetic disorder significantly reduces the critical temperature (Tc) and broadens the superconducting transition as the film thickness and device size decrease. We measure electron dephasing rates via magnetoresistance from Tc to ∼4Tc in various-thickness TiN films. Electron dephasing occurs on the picosecond timescale and is nearly independent of temperature, differing from the expected inelastic scattering due to the electron–phonon and electron–electron interactions near Tc, which occur over a nanosecond timescale. We propose spin-flip scattering as a possible additional phase-breaking mechanism. The significant increase in the dephasing rate for the thinnest film indicates that magnetic disorder resides near the surface of naturally oxidized films. Our research suggests that magnetic disorder may be a significant contributor to RF dissipation in superconducting devices based on TiN.

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Publication Details

Journal
Applied Physics Letters
Published
2025-10-23
DOI
https://doi.org/10.1063/5.0286394
Primary Topic
Magnetic properties of thin films
Type
article
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article

Low-temperature electron dephasing rates indicate magnetic disorder in superconducting TiN films

А. В. Лубенченко, Stanislav A. Evlashin, E. M. Baeva, Soham Saha et al.
Applied Physics Letters
Magnetic properties of thin films
article

Low-temperature electron dephasing rates indicate magnetic disorder in superconducting TiN films

А. В. Лубенченко, Stanislav A. Evlashin, E. M. Baeva, Soham Saha, N. A. Titova, A. Semenov, Simeon Bogdanov, A. I. Lomakin, A. I. Kolbatova, Maria A. Kirsanova, Gregory N Gol'tsman
article en

Abstract

We investigate electron transport and phase-breaking processes in thin titanium nitride (TiN) films of epitaxial quality. Previous studies show that a minute surface magnetic disorder significantly reduces the critical temperature (Tc) and broadens the superconducting transition as the film thickness and device size decrease. We measure electron dephasing rates via magnetoresistance from Tc to ∼4Tc in various-thickness TiN films. Electron dephasing occurs on the picosecond timescale and is nearly independent of temperature, differing from the expected inelastic scattering due to the electron–phonon and electron–electron interactions near Tc, which occur over a nanosecond timescale. We propose spin-flip scattering as a possible additional phase-breaking mechanism. The significant increase in the dephasing rate for the thinnest film indicates that magnetic disorder resides near the surface of naturally oxidized films. Our research suggests that magnetic disorder may be a significant contributor to RF dissipation in superconducting devices based on TiN.

Applied Physics LettersVol. 127(17)
National Research University Higher School of Economics (RU), National University of Science and Technology (RU), Skolkovo Institute of Science and Technology (RU), Argonne National Laboratory (US), Moscow State Pedagogical University (RU), University of Illinois Urbana-Champaign (US), Moscow Power Engineering Institute (RU), National University of Science and Technology (ZW)
Openalex Percentile: Top 75%
Magnetic properties of thin films
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