Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps

We present the anisotropic dielectric functions and absorption coefficients of orthorhombic single-domain (001) κ-Ga2O3. Single-domain κ-Ga2O3 grown by mist chemical vapor deposition on ε-GaFeO3 was investigated by spectroscopic ellipsometry, from the infrared to the ultraviolet spectral range. We find infrared-active phonon modes of B1 and B2 symmetry. The dielectric functions in the visible–ultraviolet range yield the high frequency dielectric constants ε∞ and the anisotropic fundamental interband transitions at 4.82 and 5.75 eV (εyy), 5.09 eV (εxx), and 5.43 eV (εzz). The results are compared to theoretical calculations, and earlier studies on multi-domain κ-Ga2O3.

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Publication Details

Journal
Applied Physics Letters
Published
2025-10-23
DOI
https://doi.org/10.1063/5.0302622
Citations
2
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.85
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article

Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps

Elias Kluth, Temma Ogawa, Martin Feneberg, R. Goldhahn et al.
2 citations
Applied Physics Letters
Ga2O3 and related materials
0.85
article

Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps

Elias Kluth, Temma Ogawa, Martin Feneberg, R. Goldhahn, Hiroyuki Nishinaka
article en
2 citations

Abstract

We present the anisotropic dielectric functions and absorption coefficients of orthorhombic single-domain (001) κ-Ga2O3. Single-domain κ-Ga2O3 grown by mist chemical vapor deposition on ε-GaFeO3 was investigated by spectroscopic ellipsometry, from the infrared to the ultraviolet spectral range. We find infrared-active phonon modes of B1 and B2 symmetry. The dielectric functions in the visible–ultraviolet range yield the high frequency dielectric constants ε∞ and the anisotropic fundamental interband transitions at 4.82 and 5.75 eV (εyy), 5.09 eV (εxx), and 5.43 eV (εzz). The results are compared to theoretical calculations, and earlier studies on multi-domain κ-Ga2O3.

Applied Physics LettersVol. 127(17)
Kyoto Institute of Technology (JP), Otto-von-Guericke-Universität Magdeburg (DE)
Openalex Percentile: Top 24%
Ga2O3 and related materials
0.85
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