The Core/Shell Interface in InP/ZnSe Colloidal Quantum Dots

InP/ZnSe core–shell quantum dots (QDs) can emit spectrally narrow light with high efficiency, but the relation between the QD properties and the composition of the core–shell interface remains unclear. Here, we compare 4 different batches of InP/ZnSe QDs, formed with or without intermediate purification and InP surface oxidation before shell growth. Elemental analysis and solid-state NMR show that the presence of InCl3 during ZnSe shell growth leads to indium incorporation into the ZnSe shell, while interfacial oxidation creates a polyphosphate at the core/shell interface. The sample in which both interfacial engineering approaches were applied features a higher photoluminescence quantum yield and the slowest biexciton Auger recombination rate. These findings support emerging insights on the InP/ZnSe core/shell interface in the literature and pave the way for further improving the optoelectronic properties of these materials by adjusting the interfacial composition.

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Publication Details

Journal
Chemistry of Materials
Published
2025-10-28
DOI
https://doi.org/10.1021/acs.chemmater.5c01622
Citations
3
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
1.55
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article

The Core/Shell Interface in InP/ZnSe Colloidal Quantum Dots

Luca Giordano, Hannes Van Avermaet, Pieter Schiettecatte, Holger Lange et al.
3 citations
Chemistry of Materials
Quantum Dots Synthesis And Properties
1.55
article

The Core/Shell Interface in InP/ZnSe Colloidal Quantum Dots

Luca Giordano, Hannes Van Avermaet, Pieter Schiettecatte, Holger Lange, Yannick Coppel, Zeger Hens, Yannic U. Staechelin, Qiang Zhao, Fabien Delpech, A. Vantomme, Guillaume Bonifas, Céline Nayral
article en
3 citations

Abstract

InP/ZnSe core–shell quantum dots (QDs) can emit spectrally narrow light with high efficiency, but the relation between the QD properties and the composition of the core–shell interface remains unclear. Here, we compare 4 different batches of InP/ZnSe QDs, formed with or without intermediate purification and InP surface oxidation before shell growth. Elemental analysis and solid-state NMR show that the presence of InCl3 during ZnSe shell growth leads to indium incorporation into the ZnSe shell, while interfacial oxidation creates a polyphosphate at the core/shell interface. The sample in which both interfacial engineering approaches were applied features a higher photoluminescence quantum yield and the slowest biexciton Auger recombination rate. These findings support emerging insights on the InP/ZnSe core/shell interface in the literature and pave the way for further improving the optoelectronic properties of these materials by adjusting the interfacial composition.

Chemistry of MaterialsVol. 37(21)
University of Potsdam (DE), Université Fédérale de Toulouse Midi-Pyrénées (FR), Laboratoire de physique des Solides (FR), Ghent University Hospital (BE), Laboratoire de Chimie de Coordination (FR), Astronomical Institute of the Slovak Academy of Sciences (SK), Institute for Physics of Microstructures (RU), Laboratoire de Physique et Chimie des Nano-Objets (FR), KU Leuven (BE)
Openalex Percentile: Top 16%
Quantum Dots Synthesis And Properties
1.55
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