Achieving Excellent and Stable Thermoelectric Properties in p-Type (Mg <sub>3.2</sub> Sb <sub>2</sub> ) <sub>0.5</sub> (YbZn <sub>2</sub> Sb <sub>2</sub> ) <sub>0.5</sub> -Based Materials via Optimizing Fabrication Processes
Developing high-performance p-type Mg<sub>3</sub>Sb<sub>2</sub>-based thermoelectric materials is vitally important to the construction of efficient all-Mg<sub>3</sub>Sb<sub>2</sub>-based thermoelectric devices. Herein, by utilizing (Mg<sub>3.2</sub>Sb<sub>2</sub>)<sub>0.5</sub>(YbZn<sub>2</sub>Sb<sub>2</sub>)<sub>0.5</sub> as an example, we demonstrate that optimizing fabrication processes is crucial to the achievement of excellent and stable thermoelectric properties. High-energy ball milling of melting-annealing-fabricated YbZn<sub>2</sub>Sb<sub>2</sub> with Mg and Sb powders, followed by spark plasma sintering, leads to the formation of (Mg<sub>3.2</sub>Sb<sub>2</sub>)<sub>0.5</sub>(YbZn<sub>2</sub>Sb<sub>2</sub>)<sub>0.5</sub> pellets with dense microstructures and stable thermoelectric properties during repeated testing. Further, the optimized synthesis route facilitates the fabrication of Ag-doped (Mg<sub>3.2</sub>Sb<sub>2</sub>)<sub>0.5</sub>(YbZn<sub>2</sub>Sb<sub>2</sub>)<sub>0.5</sub> samples with high relative density and stable thermoelectric properties, in which Ag doping effectively boosts the carrier concentration and power factor. Eventually, the (Mg<sub>3.18</sub>Ag<sub>0.02</sub>Sb<sub>2</sub>)<sub>0.5</sub>(YbZn<sub>2</sub>Sb<sub>2</sub>)<sub>0.5</sub> sample exhibits a dimensionless figure of merit (<i>zT</i>) of 1.17 at 773 K and an average <i>zT</i> of 0.69 over 300-773 K, which are among the highest values reported for p-type Mg<sub>3</sub>Sb<sub>2</sub>-based materials. This study demonstrates the importance of optimizing fabrication processes and compositional tuning in achieving high and stable thermoelectric properties in p-type Mg<sub>3</sub>Sb<sub>2</sub>-based materials.
Authors
- Xiaoyuan Zhou (ORCID: https://orcid.org/0000-0003-1088-0809)
- Xu Lu (ORCID: https://orcid.org/0000-0002-6460-4204)
- Guang Han (ORCID: https://orcid.org/0000-0001-5077-8097)
- Xiaolan Mo (ORCID: https://orcid.org/0000-0003-3623-3474)
- Yongfeng Zhang (ORCID: https://orcid.org/0000-0002-3011-643X)
- Bin Zhang (ORCID: https://orcid.org/0000-0003-0503-1503)
- Guoyu Wang (ORCID: https://orcid.org/0000-0003-0431-742X)
- Yao Chen (ORCID: https://orcid.org/0000-0003-2324-2013)
- Siyun Liu (ORCID: https://orcid.org/0000-0001-8576-7187)
- Hongpan Zhu
- Xuelian Ren (ORCID: https://orcid.org/0000-0002-6429-9609)
Institutions
- Chongqing University (CN)
- Division of Materials Science and Engineering (AU)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2025-10-27
- DOI
- https://doi.org/10.1021/acsami.5c16041
- Citations
- 2
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.04