Oxygen-Modulated Oxygen Octahedral Structure and Magnetotransport Properties of LaVO <sub>3</sub> /SrTiO <sub>3</sub> Heterostructures

Tuning the concentration and distribution of oxygen vacancies can modulate the oxygen octahedral rotations (OOR) and consequently the physical properties of the LaVO3 thin film grown on SrTiO3 (001). The OOR modes of VO6 in the films were characterized via measuring the half-integer reflections using X-ray diffraction, which reveals a structural transition from orthorhombic Fmmm to monoclinic P21/m with the increase in oxygen vacancy content via growing at high temperatures or low oxygen pressures. Concurrently, the resulting two-dimensional electron gas (2DEG) achieved a Hall mobility of 30000 cm2 V–1 s–1 and a colossal, nonsaturating linear magnetoresistance of ∼1250%. These values represent a significant improvement over previously reported LaVO3/SrTiO3 systems, demonstrating a superior magnetotransport performance. These results of merit establish oxygen-engineered LaVO3/SrTiO3 heterostructures as promising platforms for spintronic applications.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-10-28
DOI
https://doi.org/10.1021/acsaelm.5c01829
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
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article

Oxygen-Modulated Oxygen Octahedral Structure and Magnetotransport Properties of LaVO 3 /SrTiO 3 Heterostructures

Huanhua Wang, Zhen Wang, Chenxu Liu, Jinglin Zhou et al.
ACS Applied Electronic Materials
Electronic and Structural Properties of Oxides
article

Oxygen-Modulated Oxygen Octahedral Structure and Magnetotransport Properties of LaVO 3 /SrTiO 3 Heterostructures

Huanhua Wang, Zhen Wang, Chenxu Liu, Jinglin Zhou, X. M. Weng
article en

Abstract

Tuning the concentration and distribution of oxygen vacancies can modulate the oxygen octahedral rotations (OOR) and consequently the physical properties of the LaVO3 thin film grown on SrTiO3 (001). The OOR modes of VO6 in the films were characterized via measuring the half-integer reflections using X-ray diffraction, which reveals a structural transition from orthorhombic Fmmm to monoclinic P21/m with the increase in oxygen vacancy content via growing at high temperatures or low oxygen pressures. Concurrently, the resulting two-dimensional electron gas (2DEG) achieved a Hall mobility of 30000 cm2 V–1 s–1 and a colossal, nonsaturating linear magnetoresistance of ∼1250%. These values represent a significant improvement over previously reported LaVO3/SrTiO3 systems, demonstrating a superior magnetotransport performance. These results of merit establish oxygen-engineered LaVO3/SrTiO3 heterostructures as promising platforms for spintronic applications.

ACS Applied Electronic MaterialsVol. 7(21)
Chinese Academy of Sciences (CN), University of Chinese Academy of Sciences (CN), PRG S&Tech (South Korea)
Openalex Percentile: Top 75%
Electronic and Structural Properties of Oxides
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