Advances and challenges in chemical mechanical polishing of silicon carbide: materials, mechanisms, and future directions
Silicon carbide (SiC), a third-generation wide bandgap semiconductor material, demonstrates immense potential in high-temperature, high-frequency, and high-power electronic devices.
Authors
- Mengqi Wang (ORCID: https://orcid.org/0000-0002-3633-9140)
- Bin Hu (ORCID: https://orcid.org/0000-0003-2801-9873)
- Xinhuan Niu
- Jiakai Zhou (ORCID: https://orcid.org/0000-0001-7029-6933)
- Zhonghua Liu (ORCID: https://orcid.org/0000-0003-3048-9823)
- Qing Ma
- Ailin Li
- Shigeng Song
Institutions
- Tianjin University of Technology (CN)
- Hebei University of Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc03256c
- Citations
- 6
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 4.04