GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure
Abstract GaN power high electron mobility transistors (HEMTs) with a breakdown voltage (BV) exceeding 2500 V at I DSS leakage of 1 μ A mm −1 grown by plasma-assisted MBE (PA-MBE) on sapphire was demonstrated with a single field plate structure. Subdividing the 70 nm GaN channel into 12 layers has been shown to exhibit fewer defect states and reduced pore defects, thereby benefiting the BV. The single gate field plate technique helps to simplify the peak electric field condition and also contributes to the high BV. These advantages underscore the potential of the PA-MBE-grown GaN power HEMT for high-power electronic applications.
Authors
- Zhichao Yang (ORCID: https://orcid.org/0000-0002-5253-6646)
- Zhongming Zeng
- Dong Hao (ORCID: https://orcid.org/0000-0003-2797-5337)
- Bingliang Zhang (ORCID: https://orcid.org/0000-0002-9318-3680)
- Dian Ding (ORCID: https://orcid.org/0000-0003-1764-2256)
- Lei Zhu (ORCID: https://orcid.org/0000-0003-1685-7968)
- Guohao Yu (ORCID: https://orcid.org/0000-0002-6921-2728)
- Heng Yang (ORCID: https://orcid.org/0000-0002-5635-8533)
- Jing Zhuang (ORCID: https://orcid.org/0000-0002-2641-8611)
- Baoshun Zhang (ORCID: https://orcid.org/0000-0002-4628-8236)
- Eason Liao
Institutions
- Chinese Academy of Sciences (CN)
- Foton Motors (China) (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
- Suzhou Research Institute (CN)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-10-27
- DOI
- https://doi.org/10.35848/1882-0786/ae1805
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00