Polarity-switchable logic and in-sensor computing with gate-tunable two-dimensional PtTe2/WSe2 heterojunctions

A Schottky barrier diode based on 1T’-PtTe 2 /2H-WSe 2 exhibited switchable polarity and bidirectional photovoltaic response. The uniform spatial distribution of photocurrent enables in-situ reconfigurability, making it suitable for array construction and responsivity weight calculations. Due to the optoelectronic coupling, the optical logic and in-sensor kernel tunning establish a compelling pathway to enhance intelligent sensing and computing. • A novel PtTe 2 /WSe 2 heterojunction enables in-situ reconfigurability via the bottom-PtTe 2 ′s screening effect and vdWs gap in the top/suspended WSe 2 , suitable for array construction and responsivity weight calculations. • Gate-modulated interfacial electric fields achieve bidirectional rectification (ratio > 10 7 ) and high photovoltaic response (342/-476 mA/W at 635 nm) • The Schottky barrier diode realizes reconfigurable photoelectric logic gates (XNOR, NAND, AND, OR) with reduced transistor count (75–83 % less than CMOS). • Linear responsivity-gate voltage correlation enables in-sensor computing, achieving 97 % accuracy in MNIST classification and wavelength-specific image processing. • Multispectral bidirectional response (405/635/808 nm) unlocks selective processing via spectral component isolation, advancing intelligent vision systems. The pursuit of photodetectors integrating programmable logic operations and on-chip processing has emerged as a transformative frontier, driving innovations in high-performance vision systems. Two-dimensional semimetal/semiconductor heterojunctions offer a unique platform for multifunctional devices due to their van der Waals (vdWs)-coupled sharp interfaces. Here, we fabricate air-stable PtTe 2 /WSe 2 heterojunctions, enabling polarity-switchable conduction, bidirectional rectification (rectification ratio > 10 7 ), and photovoltaic response (342/-476 mA/W at 635 nm) via gate-modulated interfacial electric fields. Due to the bottom-PtTe 2 ′s screening effect and vdWs gap in the top/suspended WSe 2 , the uniform spatial distribution of photocurrent enables in-situ reconfigurability, making it highly suitable for array construction and responsivity weight calculations. Critically, the Schottky barrier diode enables photoelectric logic gate operations (XNOR, NAND, AND, OR) under modulated drain-gate biasing conditions, which indicates the universal programmability by parameterize the high/low-level criteria and increase/decrease the input window. By tuning optoelectronic kernel weight through the linear relationship between responsivity and gate voltage, analog-based in-sensor computing is validated via image classification, achieving 97 % accuracy. The reconfigured weight update further demonstrates capabilities in image sharpening and noise suppression utilizing bidirectional response at 405/635/808 nm wavelengths. Collectively, the codesign establishes a compelling pathway to enhance intelligent sensing and computing.