Scalable InAs/InGaAs DWELL structures for broadband infrared emission spanning the E- to O-band
This study presents the optimization of MOCVD growth conditions for InAs/InGaAs quantum dots-in-a-well (DWELL) structures on 4-inch GaAs substrates incorporating an InGaP seed layer. By precisely tuning the arsenic-to-indium (As/In) ratio, growth temperature, and deposition duration, we achieved accurate control over the size and density of quantum dots (QDs), enabling a broad tuning of infrared emission wavelengths from 1200 to 1450 nm. Using photoluminescence spectroscopy and numerical modeling, we investigated the impact of In content of the InₓGa<sub>1-</sub>ₓAs strain-reducing cap layers on the optical properties of the DWELL structures. A linear correlation was observed between In concentration and the emission peak wavelength, highlighting the significant role of the capping layer composition in tuning QD emission characteristics. This work highlights the critical importance of growth parameter optimization in engineering QD-based heterostructures paving the way for their integration into advanced optoelectronic and quantum technology applications.
Authors
- T. Baron (ORCID: https://orcid.org/0000-0001-5005-6596)
- Driss Mouloua (ORCID: https://orcid.org/0000-0002-5847-4247)
- Sébastien Cavalaglio (ORCID: https://orcid.org/0000-0003-3849-8273)
- M. Martin
- B. Salem (ORCID: https://orcid.org/0000-0001-8038-3205)
- F. Bassani (ORCID: https://orcid.org/0000-0001-8688-1328)
- N. Rochat (ORCID: https://orcid.org/0000-0003-3574-4424)
- J. Moeyaert
- Bouraoui Ilahi (ORCID: https://orcid.org/0000-0002-6418-6233)
- Nicolas Chauvin (ORCID: https://orcid.org/0000-0003-2200-2405)
Institutions
- Université Claude Bernard Lyon 1 (FR)
- Institut polytechnique de Grenoble (FR)
- Centre National de la Recherche Scientifique (FR)
- Université de Sherbrooke (CA)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Institut des Nanotechnologies de Lyon (FR)
- CEA Grenoble (FR)
- Direction de la Recherche Technologique (FR)
- Q & T Research (CA)
- Laboratoire des Technologies de la Microélectronique (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Institut National des Sciences Appliquées de Lyon (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Journal
- Scientific Reports
- Published
- 2025-10-27
- DOI
- https://doi.org/10.1038/s41598-025-21226-9
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Agence Nationale de la Recherche