Simulation investigation of CO <sub>2</sub> absorption-induced performance degradation in hollow-core fiber transmission systems and spectrum-optimized digital sub-carrier multiplexing design for circumvention
Hollow-core fiber (HCF) is developing rapidly, with its minimum attenuation already surpassing that of traditional solid-core fiber and continually setting new records. However, recent reports have pointed out that the CO<sub>2</sub> absorption peaks present in the attenuation spectrum of HCF can severely affect the performance of high-speed signal transmission. Using a high-precision insertion loss test platform and a swept-frequency light source, we measured the attenuation spectrum of an HCF sample and found that under high-precision wavelength interval scanning, certain wavelength positions in this sample exhibited up to 0.5 dB/km extra loss due to CO<sub>2</sub> absorption. We imported the experimental test attenuation results into VPITransmissionMaker for simulation analysis and found that in the wavelength regions where the CO<sub>2</sub> absorption peaks are severe, the bit-error rate (BER) performance of both conventional single-carrier (SC) signals and digital sub-carrier multiplexing (DSCM) signals after 100 km transmission deteriorates significantly. To address this issue, we proposed a spectrum-optimized DSCM modulation scheme with sub-carrier center frequency optimization to circumvent the overlap between the CO<sub>2</sub> absorption peaks and the effective components of the DSCM signal spectrum. Simulation results show that within a 150 GHz grid at a center frequency of 186.05 THz, for the 100 km HCF fiber measured in this study with pronounced CO<sub>2</sub> absorption peaks, the proposed novel, to the best of our knowledge, DSCM scheme achieves a >10 × BER improvement compared to conventional SC and DSCM schemes, when the optical signal-to-noise ratio of the transmission system is above 26 dB.
Authors
- Zhenfang Wang (ORCID: https://orcid.org/0000-0001-6114-0603)
- Xishuo Wang
- Anxu Zhang (ORCID: https://orcid.org/0000-0002-2454-9589)
- Ran Gao (ORCID: https://orcid.org/0000-0003-2666-1643)
- Zhipei Li (ORCID: https://orcid.org/0000-0001-5441-4979)
- Lipeng Feng (ORCID: https://orcid.org/0000-0002-9565-3789)
- Xiangjun Xin (ORCID: https://orcid.org/0000-0002-1690-056X)
- Xiaoli Huo
- Yuyang Liu (ORCID: https://orcid.org/0000-0002-0808-0047)
- Peng Li (ORCID: https://orcid.org/0000-0001-9466-2838)
- Jie Luo (ORCID: https://orcid.org/0000-0002-3614-3375)
- Lei Zhang (ORCID: https://orcid.org/0000-0001-6033-5740)
- Tao Ma (ORCID: https://orcid.org/0000-0002-6540-1601)
- Kai Lv (ORCID: https://orcid.org/0000-0002-7942-3115)
- Xia Sheng (ORCID: https://orcid.org/0000-0003-1702-8635)
Institutions
- Beijing Institute of Technology (CN)
- Yangtze Optical Electronic (China) (CN)
- Optica (US)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-10-27
- DOI
- https://doi.org/10.1364/ol.577505
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00