Mechanistic insights into the dry oxidation of amorphous silicon nitride: a DFT study
O defects in amorphous Si 3 N 4 behave very differently compared to the crystalline phase. Local excess of O defects facilitates the initial substitution of N, rationalising the exceptional oxidation resistance and measured NO : N 2 formation ratios.
Authors
- Lukas Hückmann (ORCID: https://orcid.org/0000-0003-4718-4604)
- Jörg Meyer (ORCID: https://orcid.org/0000-0003-0146-730X)
- Jonathon Cottom (ORCID: https://orcid.org/0000-0002-5918-9464)
- Robert Sylvia
- Floris Blankenvoorde
Institutions
- Leiden University (NL)
- Advanced Research Center for Nanolithography (Netherlands) (NL)
- University of Amsterdam (NL)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-10-27
- DOI
- https://doi.org/10.1039/d5tc03484a
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00