Dual-laser-assisted Defect Engineering and Chlorination for Enhanced Photoluminescence in MoS2

In this study, we demonstrate a synergistic enhancement of photoluminescence (PL) in an atomically thin molybdenum disulfide (MoS2) monolayer using a dual-laser-beam-assisted chemical modification method. A continuous-wave (CW) green laser, directed perpendicularly at the MoS2, locally raises the temperature and induces the formation of sulfur (S) vacancies, resulting in a significant increase in PL intensity. Subsequently, a UV nanosecond laser beam laterally illuminates the area above the MoS2 layer, breaking chlorine molecules and introducing chlorine radicals without damaging the sample. This process further enhances the PL in the region previously affected by S vacancies. The binding energy of chlorine atoms to S-vacancy sites is greater than that to the pristine MoS2 surface, facilitating more effective p-type doping. The stronger interaction at the defect sites created by the CW laser contributes to the observed synergistic PL enhancement. Our approach presents a novel method for precise and spatially selective chemical doping in two-dimensional (2D) van der Waals (vdW) materials.

Authors

Publication Details

Journal
Journal of the Korean Society for Precision Engineering
Published
2025-10-27
DOI
https://doi.org/10.7736/jkspe.d.25.00002
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Dual-laser-assisted Defect Engineering and Chlorination for Enhanced Photoluminescence in MoS2

Yoonsoo Rho
Journal of the Korean Society for Precision Engineering
Chalcogenide Semiconductor Thin Films
article

Dual-laser-assisted Defect Engineering and Chlorination for Enhanced Photoluminescence in MoS2

Yoonsoo Rho
article en

Abstract

In this study, we demonstrate a synergistic enhancement of photoluminescence (PL) in an atomically thin molybdenum disulfide (MoS2) monolayer using a dual-laser-beam-assisted chemical modification method. A continuous-wave (CW) green laser, directed perpendicularly at the MoS2, locally raises the temperature and induces the formation of sulfur (S) vacancies, resulting in a significant increase in PL intensity. Subsequently, a UV nanosecond laser beam laterally illuminates the area above the MoS2 layer, breaking chlorine molecules and introducing chlorine radicals without damaging the sample. This process further enhances the PL in the region previously affected by S vacancies. The binding energy of chlorine atoms to S-vacancy sites is greater than that to the pristine MoS2 surface, facilitating more effective p-type doping. The stronger interaction at the defect sites created by the CW laser contributes to the observed synergistic PL enhancement. Our approach presents a novel method for precise and spatially selective chemical doping in two-dimensional (2D) van der Waals (vdW) materials.

Journal of the Korean Society for Precision EngineeringVol. 42(10)
Openalex Percentile: Top 69%
Chalcogenide Semiconductor Thin Films
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Dual-laser-assisted Defect Engineering and Chlorination for Enhanced Photoluminescence in MoS2 — Yoonsoo Rho · Journal of the Korean Society for Precision Engineering (2025) | TGRS Research Map | TGRS