Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments

As semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur, flipping stored bits. Furthermore, with aggressive scaling, charge sharing among adjacent devices can trigger single-event multi-node upsets (SEMNU). To address these reliability concerns, this study presents a radiation-hardened SRAM design, SHWA18T, tailored for space applications. The proposed architecture is evaluated against IASE16T, PRO14T, PRO16T, QCCS, SIRI, and SEA14T. Simulation analysis demonstrates that SHWA18T achieves improved performance, particularly in terms of critical charge and write capability. The design was implemented in 90 nm CMOS technology at a 1 V supply. With enhanced robustness, the cell withstands both SEUs and SEMNUs, thereby guaranteeing stable data retention in space environments.