Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density

High-electron-mobility transistors (HEMTs) are characterized by the formation of a two-dimensional electron gas (2DEG) induced by the polarization effects. Considerable studies have been conducted to improve the electrical properties of HEMTs by regulating the 2DEG density. In this study, a Si/GaN heterojunction was fabricated through the transfer of a heavily boron-doped Si nanomembrane. The holes in the p-Si layer integrated on top of the HEMT not only increased the surface positive charge, which eventually increased the density of electrons at the AlGaN/GaN interface, but also acted as a passivation layer to improve the performance of AlGaN/GaN HEMTs. Electrical characterization revealed that the maximum drain current increased from 668 mA/mm to 740 mA/mm, and the maximum transconductance improved from 200.2 mS/mm to 220.4 mS/mm. These results were due to the surface positive charge induced by the p-Si layer, which lowered the energy band diagram and increased the electron concentration at the AlGaN/GaN interface by a factor of 1.4 from 1.52 × 10²⁰ cm^-3 to 2.11 × 10²⁰ cm^-3.