Simulation of a Controllable Magnetization Reversal in a Chain of φ0 Junctions by an Alternating Voltage Pulse

We have investigated the system consisting of three $${{\varphi }_{0}}$$ Josephson junctions, each connected in series to the resonant circuits with different eigenfrequencies. By applying an external alternating voltage pulse with a frequency coinciding with the eigenfrequency of the selected resonant circuit, the possibility of a controllable magnetization reversal is demonstrated. The influence of system parameters on the dynamics of magnetization in each of the $${{\varphi }_{0}}$$ -junctions is studied in detail and the intervals of model parameters for a controllable magnetization reversal are clarified. We expect that the obtained results can be used to develop cryogenic memory based on many $${{\varphi }_{0}}$$ -junctions.

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Publication Details

Journal
Physics of Particles and Nuclei
Published
2025-10-25
DOI
https://doi.org/10.1134/s1063779625700923
Primary Topic
Magnetic properties of thin films
Type
article
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article

Simulation of a Controllable Magnetization Reversal in a Chain of φ0 Junctions by an Alternating Voltage Pulse

I. R. Rahmonov, Oksana Streltsova, A. R. Rahmonova, M. I. Zuev
Physics of Particles and Nuclei
Magnetic properties of thin films
article

Simulation of a Controllable Magnetization Reversal in a Chain of φ0 Junctions by an Alternating Voltage Pulse

I. R. Rahmonov, Oksana Streltsova, A. R. Rahmonova, M. I. Zuev
article en

Abstract

We have investigated the system consisting of three $${{\varphi }_{0}}$$ Josephson junctions, each connected in series to the resonant circuits with different eigenfrequencies. By applying an external alternating voltage pulse with a frequency coinciding with the eigenfrequency of the selected resonant circuit, the possibility of a controllable magnetization reversal is demonstrated. The influence of system parameters on the dynamics of magnetization in each of the $${{\varphi }_{0}}$$ -junctions is studied in detail and the intervals of model parameters for a controllable magnetization reversal are clarified. We expect that the obtained results can be used to develop cryogenic memory based on many $${{\varphi }_{0}}$$ -junctions.

Physics of Particles and NucleiVol. 56(6)
Joint Institute for Nuclear Research (RU), Dubna State University (RU)
Openalex Percentile: Top 75%
Magnetic properties of thin films
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