Theoretical Optimization of Environmentally Friendly Alternative Indium-Doped Zinc Oxide (IZO) in CdTe Solar Cell Technology by SCAPS-1D

Abstract This research paper investigates the potential use of indium-doped zinc oxide (IZO) as a window layer in solar cells. To achieve this, the heterostructure Al/ITO/IZO/CdTe/ back contact was simulated using SCAPS-1D, demonstrating its viability. The thickness and carrier concentration of both IZO and CdTe were systematically varied to optimize their values and optimal values was found to be 0.05 μm and N D =10 20 cm −3 for IZO and 3.0 μm and N A =10 16 cm −3 for CdTe respectively. Furthermore, the study explored the influence of defect density of IZO/CdTe interface on performance of solar cell, interval of simulation was from 10 10 to 10 15 cm −2 the better performance was obtained at lower defect density. Optimum shunt and series resistance values are in the interval of 3000–5000 Ω $$\:{\bullet\:cm}^{2}$$ and 1–5 Ω $$\:{\bullet\:cm}^{2}$$ respectively. Finally, it was demonstrated by extensive optimization of these parameters and using ITO as TCO and Pt as back contact, the highest predicted efficiency was 25.24%, with Voc of 0.96 V and Jsc of 30.12 mA/cm².