One-dimensional Si/SiO <sub>2</sub> photonic crystal filters for Ga <sub>x</sub> In <sub>1−x</sub> As <sub>y</sub> Sb <sub>1−y</sub> thermophotovoltaic devices

With crystalline silicon and silicon oxide, we demonstrate the as-formed one-dimensional photonic crystal filter, in both the general and modified configurations, to reshape the thermal spectrum for Ga x In 1−x As y Sb 1−y devices. Including the inherent dispersive dielectric properties of sublayers, our calculations indicate that the optimal filters only have five silicon–silicon oxide units, and the central wavelength of the filter deviates from that for nondispersive properties on the order of 0.04−0.06 λ C (the cutting-off wavelength of the underlying cell). For a 0.5 eV GaInAsSb cell, the application of the optimized central wavelength gives rise to a net improvement of spectrum efficiency on the order of ∼2%, which can be further amplified to 6%–7% by adding a nonzero aperiodic factor for the front and rear units. Our observations offer some favorable strategies to efficiently manage the thermal-to-electricity energy conversion in Ga x In 1−x As y Sb 1−y thermophotovoltaic systems.

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Publication Details

Journal
Journal of the Optical Society of America B
Published
2025-10-24
DOI
https://doi.org/10.1364/josab.575204
Primary Topic
Thermal Radiation and Cooling Technologies
Type
article
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article

One-dimensional Si/SiO 2 photonic crystal filters for Ga x In 1−x As y Sb 1−y thermophotovoltaic devices

Xin Li, Xinlong Ma, Yu Wang
Journal of the Optical Society of America B
Thermal Radiation and Cooling Technologies
article

One-dimensional Si/SiO 2 photonic crystal filters for Ga x In 1−x As y Sb 1−y thermophotovoltaic devices

Xin Li, Xinlong Ma, Yu Wang
article en

Abstract

With crystalline silicon and silicon oxide, we demonstrate the as-formed one-dimensional photonic crystal filter, in both the general and modified configurations, to reshape the thermal spectrum for Ga x In 1−x As y Sb 1−y devices. Including the inherent dispersive dielectric properties of sublayers, our calculations indicate that the optimal filters only have five silicon–silicon oxide units, and the central wavelength of the filter deviates from that for nondispersive properties on the order of 0.04−0.06 λ C (the cutting-off wavelength of the underlying cell). For a 0.5 eV GaInAsSb cell, the application of the optimized central wavelength gives rise to a net improvement of spectrum efficiency on the order of ∼2%, which can be further amplified to 6%–7% by adding a nonzero aperiodic factor for the front and rear units. Our observations offer some favorable strategies to efficiently manage the thermal-to-electricity energy conversion in Ga x In 1−x As y Sb 1−y thermophotovoltaic systems.

Journal of the Optical Society of America BVol. 42(12)
Openalex Percentile: Top 68%
Thermal Radiation and Cooling Technologies
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