Demonstration of AlGaAs/GeSn p-i-n diodes

This study reports the fabrication and characterization of an Al0.3Ga0.7As/Ge0.853Sn0.147/GeSn p-i-n double heterostructure (DHS) diode using a grafting approach for advanced optoelectronic applications, building upon prior work on the band alignment of this heterostructure. Compared to a reference Si0.03Ge0.89Sn0.08/Ge0.853Sn0.147/GeSn DHS diode fabricated using the same process, the grafted Al0.3Ga0.7As/Ge0.853Sn0.147/GeSn diodes exhibit a significantly reduced reverse leakage current (6.90 × 10−5 A/cm2 at −2 V), corresponding to an average on/off ratio of 2.95 × 103 across 326 devices. This performance enhancement is attributed to improved hole-blocking by the p-type AlGaAs cap layer, which suppresses reverse leakage and enhances rectification. Capacitance–voltage measurements reveal an interface trap density for the double heterojunction in the range of 0.86–5.4 × 1012/cm2 eV. These results establish the AlGaAs/GeSn DHS as a promising platform for next-generation electrically pumped GeSn lasers, potentially operable at elevated temperatures, and highlight its potential for advancing GeSn-based optoelectronic technologies for on-chip integration.

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Publication Details

Journal
APL Electronic Devices
Published
2025-10-24
DOI
https://doi.org/10.1063/5.0284809
Primary Topic
Photonic and Optical Devices
Type
article
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article

Demonstration of AlGaAs/GeSn p-i-n diodes

Jiarui Gong, Sudip Acharya, Alireza Abrand, Qingxiao Wang et al.
APL Electronic Devices
Photonic and Optical Devices
article

Demonstration of AlGaAs/GeSn p-i-n diodes

Jiarui Gong, Sudip Acharya, Alireza Abrand, Qingxiao Wang, Boon S. Ooi, Yang Liu, Shui-Qing Yu, Parsian K. Mohseni, Jie Zhou, Tien Khee Ng, Yiran Li, Yi Lu, Zhenqiang Ma, Daniel Vincent, Samuel Haessly
article en

Abstract

This study reports the fabrication and characterization of an Al0.3Ga0.7As/Ge0.853Sn0.147/GeSn p-i-n double heterostructure (DHS) diode using a grafting approach for advanced optoelectronic applications, building upon prior work on the band alignment of this heterostructure. Compared to a reference Si0.03Ge0.89Sn0.08/Ge0.853Sn0.147/GeSn DHS diode fabricated using the same process, the grafted Al0.3Ga0.7As/Ge0.853Sn0.147/GeSn diodes exhibit a significantly reduced reverse leakage current (6.90 × 10−5 A/cm2 at −2 V), corresponding to an average on/off ratio of 2.95 × 103 across 326 devices. This performance enhancement is attributed to improved hole-blocking by the p-type AlGaAs cap layer, which suppresses reverse leakage and enhances rectification. Capacitance–voltage measurements reveal an interface trap density for the double heterojunction in the range of 0.86–5.4 × 1012/cm2 eV. These results establish the AlGaAs/GeSn DHS as a promising platform for next-generation electrically pumped GeSn lasers, potentially operable at elevated temperatures, and highlight its potential for advancing GeSn-based optoelectronic technologies for on-chip integration.

APL Electronic DevicesVol. 1(4)
University of Wisconsin–Madison (US), Rochester Institute of Technology (US), King Abdullah University of Science and Technology (SA), University of Arkansas at Fayetteville (US)
Openalex Percentile: Top 70%
Photonic and Optical Devices
DOIOpen Access PDFOpenAlex
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