Epitaxial Growth of Hexagonal Boron Nitride and Device Application

Abstract Hexagonal boron nitride (h-BN) is a representative wide-bandgap two-dimensional layered material with an atomically complete surface and no dangling bonds and charged impurities and has excellent mechanical stability thermal stability and chemical inertness.Because it exhibits extraordinary properties in the fields of optoelectronics quantum optics and electronics it has become a low-dimensional substrate material carrier for various application scenarios.In this paper the basic structure of h-BN and the properties of optoelectal mechanical thermal and other aspects are systematically introduced and then the latest preparation methods of h-BN are described including exfoliation chemical and physical vapor deposition and molecular beam epitaxy.Then the latest research progress of h-BN device applications is introduced from multiple dimensions such as transfer medium FET gate dielectric layer DUV optoelectronic device single photon source and neutron detection.Finally based on the research status and key problems of h-BN some challenges and bottlenecks are analyzed and the future development direction is proposed. Key words two-