In Situ Raman Measurement of the Growth of SiCOH Thin Film Using Hexamethyl-Disiloxane (HMDSO) Mixture Source in Semiconductor Interconnection

This research focuses on the real-time monitoring of SiCOH thin films grown by chemical vapor deposition (CVD) using Raman spectroscopy. To ensure the reliability of CVD-deposited materials in semiconductor processes, the study analyzes the growth and properties of thin films in situ. With the increasing demand for low-dielectric constant (low-k) materials due to the miniaturization of semiconductor components, real-time monitoring becomes essential for controlling film thickness, quality, and composition during deposition. Dual laser wavelengths (405 nm and 532 nm) were used to capture Raman spectra and observe changes in film thickness, crystallinity, and the bonding structures of Si-C, Si-OH, and C-C. The results demonstrate that Raman spectroscopy effectively detects real-time molecular changes in thin films, showing a clear correlation between deposition time and film properties such as crystallinity and bond formation. This approach provides valuable insights for optimizing semiconductor thin film processes in real-time.