In‐Situ Thermal Conductivity Modulation and Characterization of Silicon Carbide Nanowires via Bending Strain

Abstract Silicon carbide (SiC) nanowires show great promise in advanced semiconductor applications, where internal stress generated during processing has a critical impact on their thermal conductivities. However, in situ stress modulation and thermal conductivity measurement of individual nanowires remain technically challenging. Herein, an in situ approach is proposed to characterize thermal transport of individual SiC nanowires under controlled bending strain utilizing Pt nanopillars on a MEMS suspended thermal bridge. Measurements reveal a 44.8% reduction in thermal conductivity at 0.429% bending strain, demonstrating a direct correlation between strain and phonon transport. Transmission electron microscopy confirms lattice deformation under bending, with compression on the inner arc and tension on the outer arc. Molecular dynamics simulations elucidate the physical mechanism of stress‐induced thermal conductivity reduction. This work advances the understanding of strain‐phonon scattering interactions in SiC nanowires and establishes a robust framework for in situ investigation of nanoscale thermal transport under mechanical stress, offering valuable insights for the design of strain‐engineered semiconductor device.