Electrical characterization of hexagonal SiGe
We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type samples resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step toward use of hex-SiGe for optoelectronic applications.
Authors
- Wouter H. J. Peeters (ORCID: https://orcid.org/0000-0003-2836-4220)
- Erik P. A. M. Bakkers (ORCID: https://orcid.org/0000-0002-8264-6862)
- Heinz Schmid (ORCID: https://orcid.org/0000-0002-0228-4268)
- Federico Balduini (ORCID: https://orcid.org/0009-0002-4257-2384)
- Marco Vettori (ORCID: https://orcid.org/0000-0002-7236-5274)
- Marilyne Sousa
- Isabelle Bollier
Institutions
- IBM Research - Zurich (CH)
- Eindhoven University of Technology (NL)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-10-20
- DOI
- https://doi.org/10.1063/5.0287884
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00