Quantum Phase Transitions in Graphene Coupled to a Twisted WSe <sub>2</sub> Moiré Ferroelectricity

Sublattice symmetry in graphene governs its Dirac semimetal behavior, where electrons exhibit linear dispersion, limiting its potential for technological applications. Here, moiré ferroelectricity in twisted WSe<sub>2</sub> (t-WSe<sub>2</sub>) is exploited to break graphene's sublattice symmetry, inducing a metal-to-insulator transition (MIT) near room temperature. The periodic polarization domains in t-WSe<sub>2</sub> imprint an electrostatic potential onto graphene, breaking its sublattice symmetry and leading to the emergence of a local Dirac point, as observed in the transfer characteristics of a t-WSe<sub>2</sub>/graphene field-effect transistor. Temperature-dependent transport measurements reveal multiple MIT points at relatively high temperatures, attributed to the room-temperature ferroelectric polarization in t-WSe<sub>2</sub>. Furthermore, A distinct metallic phases is identified exhibiting T<sup>2</sup> and linear-T dependent longitudinal resistance under electrostatic doping, indicative of Fermi-liquid and non-Fermi-liquid metallic behavior, respectively. Finally, finite-size scaling analysis of R<sub>xx</sub> near the MIT points indicates continuous quantum phase transitions near room temperature, establishing moiré ferroelectricity as a pathway for engineering quantum electronic phases of monolayer graphene at ambient conditions.

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Publication Details

Journal
Advanced Materials
Published
2025-10-22
DOI
https://doi.org/10.1002/adma.202514744
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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Quantum Phase Transitions in Graphene Coupled to a Twisted WSe 2 Moiré Ferroelectricity

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Quantum Phase Transitions in Graphene Coupled to a Twisted WSe 2 Moiré Ferroelectricity

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article en

Abstract

Sublattice symmetry in graphene governs its Dirac semimetal behavior, where electrons exhibit linear dispersion, limiting its potential for technological applications. Here, moiré ferroelectricity in twisted WSe<sub>2</sub> (t-WSe<sub>2</sub>) is exploited to break graphene's sublattice symmetry, inducing a metal-to-insulator transition (MIT) near room temperature. The periodic polarization domains in t-WSe<sub>2</sub> imprint an electrostatic potential onto graphene, breaking its sublattice symmetry and leading to the emergence of a local Dirac point, as observed in the transfer characteristics of a t-WSe<sub>2</sub>/graphene field-effect transistor. Temperature-dependent transport measurements reveal multiple MIT points at relatively high temperatures, attributed to the room-temperature ferroelectric polarization in t-WSe<sub>2</sub>. Furthermore, A distinct metallic phases is identified exhibiting T<sup>2</sup> and linear-T dependent longitudinal resistance under electrostatic doping, indicative of Fermi-liquid and non-Fermi-liquid metallic behavior, respectively. Finally, finite-size scaling analysis of R<sub>xx</sub> near the MIT points indicates continuous quantum phase transitions near room temperature, establishing moiré ferroelectricity as a pathway for engineering quantum electronic phases of monolayer graphene at ambient conditions.

Advanced MaterialsVol. 38(5)
Seoul National University of Science and Technology (KR), Seoul National University (KR), Jawaharlal Nehru University (IN), National University of Singapore (SG), Chungnam National University (KR), National Institute for Materials Science (JP), Government College University, Lahore (PK), Sungkyunkwan University (KR)
National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea
Openalex Percentile: Top 76%
2D Materials and Applications
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