Controllable Wave Vector Filtering in a Hybrid Semiconductor Nanostructure Modulated by a δ-Doping

Parallelly assembling a half-infinitely-wide ferromagnetic stripe and a wire-like Schottky-metal (SM) stripe on the surface of GaAs/Al x Ga[Formula: see text]As heterostructure can construct a hybrid semiconductor nanostructure (HSN). This nanostructure was recently demonstrated to be an excellent electron–momentum filter. In order to obtain a controllable nanoelectronics device, a [Formula: see text]-potential is embedded inside this device with the help of atomic-layer doping. As a result, an incredible wave-vector filtering (WVF) effect still appears in this [Formula: see text]-doped nanostructure. Besides, the WVF efficiency can be manipulated well by either the weight or the position of the [Formula: see text]-doping. Therefore, a structurally manipulable electron–momentum filter can be achieved for nanoelectronics device applications.