Novel two-dimensional transition metal dichalcogenide-based electronic materials synthesis, structure, and their exceptional electrical transport properties for next-generation electronics

Two-dimensional transition metal dichalcogenides (2D-TMDs) have emerged as pivotal candidates for overcoming performance bottlenecks in traditional silicon-based devices, owing to their atomic-scale thickness, tunable bandgaps, and high carrier mobility. This study systematically investigates precision fabrication techniques including chemical vapor deposition (CVD), metal-liquid epitaxy (MBE), and liquid-phase synthesis, combined with characterization methods such as scanning tunneling microscopy (STM) and X-ray absorption spectroscopy (XAFS). The research reveals how layer count, strain, and defects regulate electrical transport properties. Specifically, MoS₂/graphene heterojunction photodetectors achieve 45A/W responsivity and 10¹³Jones detection efficiency at 405nm, while WSe₂ demonstrates 3μs response time in the near-infrared region. PtSe₂ exhibits a broad spectral response spanning 400-2000nm. These materials provide essential support for logic circuits, flexible sensing devices, and quantum devices, driving the evolution of electronic components toward higher integration and lower power consumption.