Lead-Free Cs <sub>3</sub> BiBr <sub>6</sub> Perovskite Memristor for Biomimetic Nociceptor Emulation and Information Encryption

Driven by the demand for device multifunctionality in fields such as neuromorphic computing, biomimetic sensing, and information security, memristors have become a research focus due to their dual capabilities of data storage and signal processing. Herein, a Cs<sub>3</sub>BiBr<sub>6</sub> lead-free perovskite memristor with a sandwich structure of Ag/PMMA/Cs<sub>3</sub>BiBr<sub>6</sub>/ITO is fabricated and systematically investigated. Under a low current compliance of 1 mA, the device demonstrates stable bipolar resistive switching behavior, including over 800 switching cycles, an average on/off ratio greater than 20, and good data retention. At 10 mA, random high-resistance state distribution enables construction of a true random number array. The switching mechanism is dominated by Ag atoms and bromide vacancies driving conductive filaments fracture-regeneration. Moreover, the device emulates the nociceptor function in biological systems, achieving graded stimulus discrimination and postinjury hyperalgesia reproduction. Additionally, OR/AND/XOR logic gates are constructed via bipolar resistive switching, with digital information and image encryption/decryption realized via the integration of the random key matrix.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2025-10-22
DOI
https://doi.org/10.1021/acs.jpclett.5c02632
Citations
2
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
1.46
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article

Lead-Free Cs 3 BiBr 6 Perovskite Memristor for Biomimetic Nociceptor Emulation and Information Encryption

Kailiang Zhang, Yuchan Wang, Xu Han, Wenxia Zhang et al.
2 citations
The Journal of Physical Chemistry Letters
Advanced Memory and Neural Computing
1.46
article

Lead-Free Cs 3 BiBr 6 Perovskite Memristor for Biomimetic Nociceptor Emulation and Information Encryption

Kailiang Zhang, Yuchan Wang, Xu Han, Wenxia Zhang, Shiming Zhao, Ting Chen, T.C. Chai
article en
2 citations

Abstract

Driven by the demand for device multifunctionality in fields such as neuromorphic computing, biomimetic sensing, and information security, memristors have become a research focus due to their dual capabilities of data storage and signal processing. Herein, a Cs<sub>3</sub>BiBr<sub>6</sub> lead-free perovskite memristor with a sandwich structure of Ag/PMMA/Cs<sub>3</sub>BiBr<sub>6</sub>/ITO is fabricated and systematically investigated. Under a low current compliance of 1 mA, the device demonstrates stable bipolar resistive switching behavior, including over 800 switching cycles, an average on/off ratio greater than 20, and good data retention. At 10 mA, random high-resistance state distribution enables construction of a true random number array. The switching mechanism is dominated by Ag atoms and bromide vacancies driving conductive filaments fracture-regeneration. Moreover, the device emulates the nociceptor function in biological systems, achieving graded stimulus discrimination and postinjury hyperalgesia reproduction. Additionally, OR/AND/XOR logic gates are constructed via bipolar resistive switching, with digital information and image encryption/decryption realized via the integration of the random key matrix.

The Journal of Physical Chemistry LettersVol. 16(43)
Chongqing University of Posts and Telecommunications (CN), Tianjin University of Technology (CN)
Openalex Percentile: Top 15%
Advanced Memory and Neural Computing
1.46
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