Fast-Response Self-Powered Polarized Broadband Photodetector Based on ReS <sub>2</sub> /Nb <sub>3</sub> Cl <sub>8</sub> van der Waals Heterostructure

Two-dimensional van der Waals heterojunctions have attracted considerable attention in photodetector research owing to their excellent material compatibility and superior optoelectronic performance. Heterojunctions constructed from 2D materials, with their nanoscale thickness and intrinsic van der Waals interfacial contact characteristics, exhibit unique photoresponse behaviors. In this work, we successfully fabricate a self-powered photodetector based on a ReS2/Nb3Cl8 vdWH. The device demonstrates a low dark current (∼10–13 A) and achieves a rectification ratio of 1.2 × 103 under zero bias. Owing to the built-in electric field at the heterojunction interface, the device manifests photovoltaic characteristics, yielding an open-circuit voltage of 0.078 V and a short-circuit current of 0.18 nA. This detector achieves a high responsivity of 69.5 mA/W, an excellent specific detectivity of 1.67 × 1012 Jones, a switching ratio of 2.58 × 103, an anisotropy ratio of up to 1.85, and a fast response time of 88/102 μs at zero bias voltage. Furthermore, the device exhibits outstanding self-powered photoresponse characteristics across a broad spectral range from 365 to 940 nm. These results effectively demonstrate the significant application value of the ReS2/Nb3Cl8 vdWH for broadband self-powered photodetection.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-10-22
DOI
https://doi.org/10.1021/acsaelm.5c01645
Primary Topic
2D Materials and Applications
Type
article
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article

Fast-Response Self-Powered Polarized Broadband Photodetector Based on ReS 2 /Nb 3 Cl 8 van der Waals Heterostructure

Xiaofei Ma, Peng Huang, Wenshuai Gao, Ziyi Fan et al.
ACS Applied Electronic Materials
2D Materials and Applications
article

Fast-Response Self-Powered Polarized Broadband Photodetector Based on ReS 2 /Nb 3 Cl 8 van der Waals Heterostructure

Xiaofei Ma, Peng Huang, Wenshuai Gao, Ziyi Fan, Mengyao Chen, Lin Feng Wu, Mingliang Tian, Zhengyu Xu, Cheng Wang, Liang Li, Liping Han
article en

Abstract

Two-dimensional van der Waals heterojunctions have attracted considerable attention in photodetector research owing to their excellent material compatibility and superior optoelectronic performance. Heterojunctions constructed from 2D materials, with their nanoscale thickness and intrinsic van der Waals interfacial contact characteristics, exhibit unique photoresponse behaviors. In this work, we successfully fabricate a self-powered photodetector based on a ReS2/Nb3Cl8 vdWH. The device demonstrates a low dark current (∼10–13 A) and achieves a rectification ratio of 1.2 × 103 under zero bias. Owing to the built-in electric field at the heterojunction interface, the device manifests photovoltaic characteristics, yielding an open-circuit voltage of 0.078 V and a short-circuit current of 0.18 nA. This detector achieves a high responsivity of 69.5 mA/W, an excellent specific detectivity of 1.67 × 1012 Jones, a switching ratio of 2.58 × 103, an anisotropy ratio of up to 1.85, and a fast response time of 88/102 μs at zero bias voltage. Furthermore, the device exhibits outstanding self-powered photoresponse characteristics across a broad spectral range from 365 to 940 nm. These results effectively demonstrate the significant application value of the ReS2/Nb3Cl8 vdWH for broadband self-powered photodetection.

ACS Applied Electronic MaterialsVol. 7(21)
Anhui University (CN), Chinese Academy of Sciences (CN), Hefei Institutes of Physical Science (CN), High Magnetic Field Laboratory (CN), Nanomaterials Research (United States) (US)
Openalex Percentile: Top 76%
2D Materials and Applications
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