Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

Tin-based perovskites are emerging as less-toxic alternatives to their lead-based counterparts for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). However, despite their great potential, the efficiency of pure red tin-based perovskite LEDs (Sn-LEDs) still lags behind that of lead-based perovskite LEDs (Pb-LEDs), partly due to the poor electron blocking at the PEDOT:PSS/perovskite interface. This leads to detrimental nonradiative recombination pathways that limit the performance of the LEDs. In this study, we replaced the conventional PEDOT:PSS layer with the self-assembled monolayer (SAM) EADR03, presenting, to the best of our knowledge, the first report of a SAM employed as a hole-selective layer in Sn-LEDs. EADR03 simultaneously acted as an efficient electron-blocking and hole-injecting layer, thereby reducing interfacial recombination losses and enhancing the LEDs' performance. As a result, we achieved a 3-fold enhancement in external quantum efficiency, propelling the advancement of more efficient tin-based perovskite LEDs.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-10-22
DOI
https://doi.org/10.1021/acsami.5c15797
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

Jhonatan Rodríguez‐Pereira, Jesús Sánchez‐Díaz, Antonio Abate, Iván Mora‐Seró et al.
ACS Applied Materials & Interfaces
Perovskite Materials and Applications
article

Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

Jhonatan Rodríguez‐Pereira, Jesús Sánchez‐Díaz, Antonio Abate, Iván Mora‐Seró, Juan Luis Delgado, Ece Aktas, Sergio Galve‐Lahoz
article en

Abstract

Tin-based perovskites are emerging as less-toxic alternatives to their lead-based counterparts for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). However, despite their great potential, the efficiency of pure red tin-based perovskite LEDs (Sn-LEDs) still lags behind that of lead-based perovskite LEDs (Pb-LEDs), partly due to the poor electron blocking at the PEDOT:PSS/perovskite interface. This leads to detrimental nonradiative recombination pathways that limit the performance of the LEDs. In this study, we replaced the conventional PEDOT:PSS layer with the self-assembled monolayer (SAM) EADR03, presenting, to the best of our knowledge, the first report of a SAM employed as a hole-selective layer in Sn-LEDs. EADR03 simultaneously acted as an efficient electron-blocking and hole-injecting layer, thereby reducing interfacial recombination losses and enhancing the LEDs' performance. As a result, we achieved a 3-fold enhancement in external quantum efficiency, propelling the advancement of more efficient tin-based perovskite LEDs.

ACS Applied Materials & InterfacesVol. 17(44)
Universitat Jaume I (ES), Ikerbasque (ES), Central European Institute of Technology (CZ), University of Pardubice (CZ), University of the Basque Country (ES), Polymat (ES), Brno University of Technology (CZ), University of Naples Federico II (IT)
Università degli Studi di Napoli Federico II, University of Oxford, European Commission, Euskal Herriko Unibertsitatea, Ikerbasque, Basque Foundation for Science, Vysoké Učení Technické v Brně, Ministerio de Ciencia e Innovación, Central European Institute of Technology, Univerzita Pardubice, HORIZON EUROPE Framework Programme, Agencia Estatal de Investigación, HORIZON EUROPE European Innovation Council
Openalex Percentile: Top 70%
Perovskite Materials and Applications
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