InAs/InAlGaAs/(001) InP quantum dot lasers achieving >100°C continuous-wave operation via uniformity-enhanced MOCVD growth
Based on an optimized InAs/(001) InP quantum dot (QD) growth process, we systematically characterized 1.55 μm InAs QD lasers and demonstrated markedly improved high-temperature operation. Continuous-wave lasing above 105°C was achieved both in Fabry-Pérot (FP) devices with five QD layers in the broad-area (BA) geometry and nine QD layers in a narrow-ridge geometry. Under pulsed operation, these FP-BA lasers sustained lasing up to 120°C, and it reached a low threshold current density of 296 A/cm<sup>2</sup> (59.2 A/cm<sup>2</sup> per QD layer).
Authors
- Zizhuo Liu (ORCID: https://orcid.org/0000-0001-7928-8251)
- Weijie Gao (ORCID: https://orcid.org/0000-0002-6082-6993)
- Xuezhe Yu (ORCID: https://orcid.org/0000-0003-4896-8312)
- Changlei Wu
- Lijun Wang (ORCID: https://orcid.org/0000-0001-8712-1275)
- Bin Wang (ORCID: https://orcid.org/0000-0001-6850-5206)
- Wei Chen (ORCID: https://orcid.org/0009-0002-7614-3414)
- Yugang Zeng
- Qin Li (ORCID: https://orcid.org/0000-0002-3669-1830)
- Yongqiang Ning (ORCID: https://orcid.org/0009-0003-7848-9715)
Institutions
- University of Electronic Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-10-22
- DOI
- https://doi.org/10.1364/ol.574282
- Citations
- 2
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46