A comprehensive study on the structural, electrical and optical properties of DC sputtered Molybdenum thin films

This study investigates the influence of key deposition parameters on the optoelectronic properties of Molybdenum (Mo) films fabricated via DC magnetron sputtering. The results demonstrate that increasing the Argon gas pressure significantly raises the sheet resistance, primarily due to increased porosity and defect formation. In contrast, films deposited at lower pressures exhibit higher conductivity due to their denser morphology. The substrate temperature also plays a critical role in determining crystallographic structure and electrical performance. Mo bilayer films deposited at 250 °C show a much lower sheet resistance compared to room temperature (RT) growth. Additionally, increasing the total film thickness from 500 nm to 900 nm improves crystallinity, enlarges grain size, and reduces dislocation density. X-ray diffraction (XRD) analysis confirms a predominant (110) orientation, while UV-Vis spectroscopy indicates enhanced reflectance in the near-infrared (NIR) region, reaching up to 70%. These findings provide valuable insights for optimizing Mo thin films to achieve superior conductivity, mechanical stability, and optical performance.