Antibonding and electronic instabilities in GdRu <sub>2</sub> X <sub>2</sub> (X = Si, Ge, and Sn): a new pathway toward developing centrosymmetric skyrmion materials
This work demonstrates how chemical bonding and electronic instabilities enable a new framework for understanding and developing skyrmions under desired conditions that would otherwise be impossible.
Authors
- Thao T.D. Tran (ORCID: https://orcid.org/0000-0003-2885-5134)
- Sumanta Tewari (ORCID: https://orcid.org/0000-0002-9979-6306)
- Michał J. Winiarski (ORCID: https://orcid.org/0000-0001-9083-8066)
- Yixu Wang (ORCID: https://orcid.org/0000-0002-0549-9723)
- J. Schlesinger
- Christopher J. Bartel (ORCID: https://orcid.org/0000-0002-5198-5036)
- Richard Dronskowski (ORCID: https://orcid.org/0000-0002-1925-9624)
- Ramesh Kumar (ORCID: https://orcid.org/0000-0002-6916-4973)
- Xudong Huai (ORCID: https://orcid.org/0000-0002-8724-1880)
- Dasuni Rathnaweera
Institutions
- University of Minnesota (US)
- Gdańsk University of Technology (PL)
- Clemson University (US)
- RWTH Aachen University (DE)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-10-22
- DOI
- https://doi.org/10.1039/d5tc02333e
- Citations
- 1
- Primary Topic
- Rare-earth and actinide compounds
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- National Science Foundation
- Camille and Henry Dreyfus Foundation
- Clemson University
- University of Minnesota
- Office of Naval Research
- Division of Materials Research