Study on the Damage of 6H‐SiC During the Grinding Process by C‐Ion Implantation Based on Molecular Dynamics

Abstract To improve the machinability of the brittle material 6H‐SiC (6H‐Silicon Carbide), a novel surface modification approach based on ion implantation is proposed. Molecular dynamics simulations are conducted to investigate the mechanical properties and defect evolution of ion‐implanted single‐crystal 6H‐SiC under nanoindentation conditions. The influences of implantation dose, energy, and angle on indentation force, dislocation behavior, hardness, and elastic modulus are systematically analyzed. The findings contribute to advancing high‐precision manufacturing technologies for silicon carbide materials.