Optical, composition, durability, and environmental properties of the microwave plasma-assisted sputter-deposited silicon nitride

A study is presented of the optical, mechanical, composition, durability, environmental, and structural properties of silicon nitride thin films deposited at room temperature using a vertical axis rotating drum-based microwave plasma-assisted sputter system. The deposited material composition was investigated using both X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis with time of flight (ERDA-TOF). The results indicate that the layers present a uniform composition with thickness and despite the incorporation of impurities, the Si/N ratio remains close to stoichiometric <i>S</i><i>i</i><sub>3</sub><i>N</i><sub>4</sub>. The deposited material provides homogeneous low dispersion-with a refractive index of approximately 1.98 over a wide transmittance range (350 nm to 5 µm). Additionally, the single layer silicon nitride was found to be durable with a hardness, Young's modulus, and compressive stress of 31 GPa, 240 GPa, and -454<i>M</i><i>P</i><i>a</i>, respectively. The coating was subjected to and passed external surface environmental tests covered by MIL-C-48497A durability requirements (adhesion, abrasion, and temperature/humidity cycling) and MIL-C-675C (para 4.5.9) salt spray. Moreover, 10,000 wipes on the TS1888 (para 5.4.3) sand slurry abrasion test were achieved with no visible signs of damage. A silicon nitride/silica multilayer durable broadband visible anti-reflection coating is demonstrated, passing the same range of durability and environmental tests as single layer silicon nitride.

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Publication Details

Journal
Applied Optics
Published
2025-10-21
DOI
https://doi.org/10.1364/ao.578043
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Optical, composition, durability, and environmental properties of the microwave plasma-assisted sputter-deposited silicon nitride

Lewis Fleming, A. Redondo‐Cubero, Jonathan Pomfret, Des Gibson et al.
Applied Optics
GaN-based semiconductor devices and materials
article

Optical, composition, durability, and environmental properties of the microwave plasma-assisted sputter-deposited silicon nitride

Lewis Fleming, A. Redondo‐Cubero, Jonathan Pomfret, Des Gibson, Małgorzata Kot, M. Mazur, Wenzhong Zhu, Ian Brinkley, S. Reid, Kirstin Saunders, Connor Lindsay, Elena Herguedas
article en

Abstract

A study is presented of the optical, mechanical, composition, durability, environmental, and structural properties of silicon nitride thin films deposited at room temperature using a vertical axis rotating drum-based microwave plasma-assisted sputter system. The deposited material composition was investigated using both X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis with time of flight (ERDA-TOF). The results indicate that the layers present a uniform composition with thickness and despite the incorporation of impurities, the Si/N ratio remains close to stoichiometric <i>S</i><i>i</i><sub>3</sub><i>N</i><sub>4</sub>. The deposited material provides homogeneous low dispersion-with a refractive index of approximately 1.98 over a wide transmittance range (350 nm to 5 µm). Additionally, the single layer silicon nitride was found to be durable with a hardness, Young's modulus, and compressive stress of 31 GPa, 240 GPa, and -454<i>M</i><i>P</i><i>a</i>, respectively. The coating was subjected to and passed external surface environmental tests covered by MIL-C-48497A durability requirements (adhesion, abrasion, and temperature/humidity cycling) and MIL-C-675C (para 4.5.9) salt spray. Moreover, 10,000 wipes on the TS1888 (para 5.4.3) sand slurry abrasion test were achieved with no visible signs of damage. A silicon nitride/silica multilayer durable broadband visible anti-reflection coating is demonstrated, passing the same range of durability and environmental tests as single layer silicon nitride.

Applied OpticsVol. 65(5)
Wrocław University of Science and Technology (PL), University of Strathclyde (GB), Scottish Universities Physics Alliance (GB), Universidad Autónoma de Madrid (ES), University of Glasgow (GB)
University of the West of Scotland, Science and Technology Facilities Council
Openalex Percentile: Top 81%
GaN-based semiconductor devices and materials
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