Mechanosynthesis of SbSI Targets for Pulsed Electron Deposition of Ferro-Photovoltaic Thin Films

A solvent-free, solid-state mechanochemical method was developed to synthesize the chalcohalide compound SbSI at room temperature. Dry high-energy planetary ball milling of elemental antimony, sulfur, and iodine produced a pure, stoichiometric polycrystalline SbSI powder with an orthorhombic structure. This powder was then sintered under mild thermal conditions to create dense targets. Amorphous SbSI thin films were subsequently deposited from these targets at room temperature using Pulsed Electron Deposition. The films maintained the correct stoichiometry and exhibited an optical bandgap of 1.89 eV. Post-deposition annealing at 90 °C in air successfully induced crystallization, demonstrating a viable, low-temperature, and eco-friendly route to produce polycrystalline SbSI thin films. This scalable approach has promising potential for optoelectronic and energy-harvesting applications.

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Publication Details

Journal
Coatings
Published
2025-10-21
DOI
https://doi.org/10.3390/coatings15101232
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Mechanosynthesis of SbSI Targets for Pulsed Electron Deposition of Ferro-Photovoltaic Thin Films

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Mechanosynthesis of SbSI Targets for Pulsed Electron Deposition of Ferro-Photovoltaic Thin Films

Cinzia Giannini, Michele Casappa, Giulia Spaggiari, Giovanna Trevisi, Matteo Bronzoni, Davide Delmonte, Anna Moliterni, Marzio Rancan, Edgardo Saucedo, Stefano Rampino, E. Gilioli, Davide Calestani, Lidia Armelao, Elena Del Canale, Francesco Pattini, Alejandro Navarro-Güell, Andrea Aroldi
article en

Abstract

A solvent-free, solid-state mechanochemical method was developed to synthesize the chalcohalide compound SbSI at room temperature. Dry high-energy planetary ball milling of elemental antimony, sulfur, and iodine produced a pure, stoichiometric polycrystalline SbSI powder with an orthorhombic structure. This powder was then sintered under mild thermal conditions to create dense targets. Amorphous SbSI thin films were subsequently deposited from these targets at room temperature using Pulsed Electron Deposition. The films maintained the correct stoichiometry and exhibited an optical bandgap of 1.89 eV. Post-deposition annealing at 90 °C in air successfully induced crystallization, demonstrating a viable, low-temperature, and eco-friendly route to produce polycrystalline SbSI thin films. This scalable approach has promising potential for optoelectronic and energy-harvesting applications.

CoatingsVol. 15(10)
University of Padua (IT), Italian Institute of Technology (IT), Institute of Materials for Electronics and Magnetism (IT), Esteve Química (Spain) (ES), National Research Council (IT), Institute of Crystallography (IT)
European Commission, Consiglio Nazionale delle Ricerche
Openalex Percentile: Top 70%
Chalcogenide Semiconductor Thin Films
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