A High-Gain, High-Efficiency GaN HEMT Power Amplifier for L/S-Band 5G Vehicle Connectivity
This paper presents an optimum design of a high-power GaN-based Power Amplifier (PA) operating in the L/S-band, specifically designed for 5G-connected vehicles and IoT applications. The PA architecture consists of Class-F topology that employs the Cree CG2H40010F GaN HEMT active device. The simulation results demonstrate that, with a drain voltage of 28 V, a gate voltage of -2.8 V, and a quiescent current of 100 mA, the PA delivers an output power of 10 W, a peak gain of 17 dB, and achieve a peak PAE of 71%.
Authors
- Accursio Gulotta
- Lidia La Mendola (ORCID: https://orcid.org/0000-0001-8513-7628)
- Mohammad Soruri (ORCID: https://orcid.org/0000-0002-7193-3663)
- Patrizia Livreri (ORCID: https://orcid.org/0000-0001-8599-0418)
- Luigi Miano
Institutions
- University of Palermo (IT)
- University of Birjand (IR)
Publication Details
- Published
- 2025-09-21
- DOI
- https://doi.org/10.1109/prime66228.2025.11203722
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00