Weak temperature dependence of orbital Hall angle in Ta/Ni bilayers

In spintronics, characterizing the temperature dependence of spin Hall angle (SHA) has been a common method to explore the underlying mechanisms of spin Hall effect (SHE). However, the experimental reports of orbital Hall effect (OHE) under varying temperatures remain limited. Here, we systematically investigate the effective charge-to-spin conversion efficiency<i>θ</i>_Hin Ta/Ni and Ta/CoFeB bilayers across the temperature ranging from 10 K to 300 K, where the<i>θ</i>_Hrepresents the combined contribution of the SHA and the orbital Hall angle (OHA). The<i>θ</i>_Hof Ta/Ni remains positive across the investigated temperature range, indicating that the OHE dominates over the SHE. The Ta/CoFeB sample serves as a reference with negligible OHE, exhibiting negative values of<i>θ</i>_Hthat are consistent with the SHA of Ta. As temperature decreases, the<i>θ</i>_Hof both Ta/Ni and Ta/CoFeB increase with similar trends. Due to the significantly smaller difference of SHAs in Ta/Ni and Ta/CoFeB compared to those of OHAs, we suggest that the similar trends of<i>θ</i>_Hdemonstrate the weak temperature dependence of OHA in Ta/Ni. This finding advances the comprehensive understanding of OHE and may pave the way for the application of orbitronics.