Implementing Step‐Tunneling Path Tunnel Field‐Effect Transistor as a Photosensor: A Simulation Study

Herein, a step‐tunneling path tunnel field‐effect transistor (STP‐TFET) is implemented as a photosensor under the visible spectrum ( λ = 300–700 nm). A comparative analysis is thereby conducted for various optical parameters, which change either during the change in photo state from light to dark state or from the presence of trap charges. It is seen that under the effects of illumination when traps are present, the drain current degrades at a high rate as compared to otherwise. Further in the study, it is seen that the optical parameters such as sensitivity, responsivity, and signal‐to‐noise ratio (SNR), which are found to be 18.38, 25.28, and 54.4 dB for λ = 320 nm, also suffer a degradation due to the presence of trap charges. Thereafter, considering the changes, a thorough study is presented based on these data, and the changes are observed. Finally, the optical parameters such as responsivity, spectral sensitivity, and SNR of the STP‐TFET photodiode are compared with the photodiodes in the existing literature.