Optimal susceptor rotation speed in hot‐wall horizontal <scp>SiC</scp> epitaxy using computational fluid dynamics

Abstract Silicon carbide (SiC) semiconductors are critical for high‐temperature, high‐power, and high‐frequency electronic devices due to their high thermal conductivity and wide bandgap. Uniform SiC epitaxial layers in chemical vapour deposition (CVD) reactors are essential for consistent electrical properties and enhanced wafer productivity. This study investigates hydrodynamics and concentration distribution in a custom‐designed hot‐wall horizontal SiC‐CVD industrial‐scale reactor using a Eulerian computational fluid dynamics (CFD) model to optimize susceptor rotation speed for uniform 8‐inch SiC epitaxial thickness. The inlet gas mixture (H 2 , N 2 , C 2 H 4 , SiHCl 3 ) enters at 700°C and is preheated to 1200°C. An 8‐inch wafer is positioned on a susceptor rotating at 0–300 rpm and heated to 1700°C. Grid convergence index analysis verified mesh independence. The realizable k‐ε turbulence model provided the highest accuracy among four turbulence models. CFD results for SiHCl 3 concentration closely matched experimental SiC film thickness profile. The Rossby number (Ro), representing the ratio of coriolis to inertial effects, explains swirling flow formation, which reduces the SiHCl 3 concentration uniformity index () at high rotation speeds (250 and 300 rpm). CFD results reveal an optimal rotation speed of 200 rpm for maximum . This study provides a robust CFD‐based framework for optimizing SiC‐CVD reactor parameters.