Impact of Dielectric Materials in an Asymmetrical Shaped Band to Band TFET

In this manuscript, the band-to-band tunnel field effect transistor TFET has an asymmetrical structure and is named a T-shaped channel TFET. The TFET drain current and transconductance parameters are analyzed at different dielectric materials and doping concentrations. Here observed that the ON current of the TEFT is high for HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gate dielectric compared to other materials. Also, the switching ratio of the TFET is higher than other material combinations. All these analyses are carried out in the TCAD-Sentaurus software. Due to double gate TFET, the device is better immune to the short channel variations. Because the device drives controllability more towards the gates. The doping concentration of the TFET also changes the drain current of the device.